vishay siliconix SIR418DP document number: 65153 s09-1813-rev. a, 14-sep-09 www.vishay.com 1 n-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ?q g optimized ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc conversion ? industrial notes: a. based on t c = 25 c. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73461 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulati on process in manufacturing. a solder fill et at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 70 c/w. product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 40 0.005 at v gs = 10 v 40 24 0.006 at v gs = 4.5 v 40 orderin g information: sir41 8 dp-t1-ge3 (lead (p b )-free and halogen-free) 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak ? so- 8 bottom v ie w n -channel mosfet g d s absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 40 a a t c = 70 c 40 a t a = 25 c 23.5 b, c t a = 70 c 18.8 b, c pulsed drain current i dm 70 continuous source-drain diode current t c = 25 c i s 35 t a = 25 c 4.5 b, c avalanche current l = 0.1 mh i as 30 single-pulse avalanche energy e as 45 mj maximum power dissipation t c = 25 c p d 39 w t c = 70 c 25 t a = 25 c 5 b, c t a = 70 c 3.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 10 s r thja 20 25 c/w maximum junction-to-case (drain) steady state r thjc 2.1 3.2
www.vishay.com 2 document number: 65153 s09-1813-rev. a, 14-sep-09 vishay siliconix SIR418DP notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient v ds /t j i d = 1 a to 250 a 48 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.1 2.4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.00415 0.005 v gs = 4.5 v, i d = 15 a 0.0048 0.006 forward transconductance a g fs v ds = 15 v, i d = 20 a 95 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 2410 pf output capacitance c oss 371 reverse transfer capacitance c rss 141 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 20 a 50 75 nc v ds = 20 v, v gs = 4.5 v, i d = 20 a 24 36 gate-source charge q gs 6.5 gate-drain charge q gd 7.0 gate resistance r g f = 1 mhz 0.2 0.7 1.4 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 2 i d ? 10 a, v gen = 4.5 v, r g = 1 19 35 ns rise time t r 73 140 turn-off delay time t d(off) 32 60 fall time t f 12 24 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 2 i d ? 10 a, v gen = 10 v, r g = 1 918 rise time t r 10 20 turn-off delay time t d(off) 25 45 fall time t f 816 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 35 a pulse diode forward current a i sm 70 body diode voltage v sd i s = 4 a 0.71 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c 24 45 ns body diode reverse recovery charge q rr 15 30 nc reverse recovery fall time t a 13 ns reverse recovery rise time t b 11
document number: 65153 s09-1813-rev. a, 14-sep-09 www.vishay.com 3 vishay siliconix SIR418DP typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 14 2 8 42 56 70 0.0 0.5 1.0 1.5 2.0 2.5 v gs =10 v thr u 3 v v gs =2 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.0035 0.0039 0.0043 0.0047 0.0051 0.0055 0.0059 0142 8 42 56 70 v gs =4.5 v v gs =10 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 1224364 8 60 v ds =20 v v ds =10 v i d =20a v ds =30 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 640 12 8 0 1920 2560 3200 0 8 16 24 32 40 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 i d =20a v gs =4.5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 65153 s09-1813-rev. a, 14-sep-09 vishay siliconix SIR418DP typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.000 0.004 0.00 8 0.012 0.016 0.020 01234567 8 910 i d =20a t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 40 8 0 120 160 200 0 1 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 safe operating area, junction-to-ambient 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * dc b v dss limited 1s 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d
document number: 65153 s09-1813-rev. a, 14-sep-09 www.vishay.com 5 vishay siliconix SIR418DP typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 15 30 45 60 75 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power junction-to-case 0 10 20 30 40 50 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
www.vishay.com 6 document number: 65153 s09-1813-rev. a, 14-sep-09 vishay siliconix SIR418DP typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65153 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =110 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 single p u lse 0.02 0.05 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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